©2002 Fairchild Semiconductor Corporation MUR840, MUR860, RURP840, RURP86 Rev. B
MUR840, MUR860, RURP840, RURP860
8A, 400V - 600V Ultrafast Diodes
The MUR840, MUR860, RURP840 and RURP860 are low
forward voltage drop ultrafast recovery rectifiers (t
rr
< 60ns).
They use a glass-passivated ion-implanted, epitaxial
construction.
These devices are intended for use as output rectifiers and
flywheel diodes in a variety of high-frequency pulse-width
modulated switching regulators. Their low stored charge and
attendant fast reverse-recovery behavior minimize electrical
noise generation and in many circuits markedly reduce the
turn-on dissipation of the associated power switching
transistors.
Formerly developmental type TA09616.
Symbol
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
MUR840 TO-220AC MUR840
RURP840 TO-220AC RURP840
MUR860 TO-220AC MUR860
RURP860 TO-220AC RURP860
NOTE: When ordering, use the entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
MUR840
RURP840
MUR860
RURP860 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
400 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
400 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
400 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
88A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
16 16 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
100 100 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75 75 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175 -65 to 175
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300 300
o
C
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
260 260
o
C
Data Sheet January 2002
©2002 Fairchild Semiconductor Corporation MUR840, MUR860, RURP840, RURP86 Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION
MUR840, RURP840 MUR860, RURP860
UNITSMIN TYP MAX MIN TYP MAX
V
F
I
F
= 8A - - 1.3 - - 1.5 V
I
F
= 8A, T
C
= 150
o
C - - 1.0 - - 1.2 V
I
R
V
R
= 400V - - 100 - - -
µ
A
V
R
= 600V -----100
µ
A
V
R
= 400V, T
C
= 150
o
C - - 500 - - -
µ
A
V
R
= 600V, T
C
= 150
o
C -----500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s - -60- -60ns
I
F
= 8A, dI
F
/dt = 200A/
µ
s - -70- -70ns
t
a
I
F
= 8A, dI
F
/dt = 200A/
µ
s - 32 - - 32 - ns
t
b
I
F
= 8A, dI
F
/dt = 200A/
µ
s - 21 - - 21 - ns
Q
RR
I
F
= 8A, dI
F
/dt = 200A/
µ
s - 195 - - 195 - nC
C
J
V
R
= 10V, I
F
= 0A -25- -25-pF
R
θ
JC
--2--2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
40
0.5
10
0
0.5 11.5 22.5
175oC
25oC
100oC
VR, REVERSE VOLTAGE (V)
0 200 400 600300 500
500
0.01
0.1
1
10
100
100 175oC
100oC
25oC
IR, REVERSE CURRENT (µA)
MUR840, MUR860, RURP840, RURP860
©2002 Fairchild Semiconductor Corporation MUR840, MUR860, RURP840, RURP86 Rev. B
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
trr
IF, FORWARD CURRENT (A)
1
0
40
60
50
0.5 8
30
10
t, RECOVERY TIMES (ns)
ta
tb
20
4
TC = 25oC, dIF/dt = 200A/µs
20
40
60
tb
0.5
0814
80
ta
trr
100
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
TC = 100oC, dIF/dt = 200A/µs
25
50
75
tb
0.5
0814
100
ta
trr
125
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
TC = 175oC, dIF/dt = 200A/µs
2
0
140 145 155 175165
4
6
8
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
150
DC
SQ. WAVE
160 170
VR, REVERSE VOLTAGE (V)
40
20
0
80
0 50 100 150 200
CJ, JUNCTION CAPACITANCE (pF)
100
60
MUR840, MUR860, RURP840, RURP860
©2002 Fairchild Semiconductor Corporation MUR840, MUR860, RURP840, RURP86 Rev. B
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
MUR840, MUR860, RURP840, RURP860
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
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PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
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CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
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UHC™
UltraFET
STAR*POWER is used under license
VCX™
