Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120G
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
forward voltage Tvj = 150°C, IF = 35 A VF-1,15 -V
Schleusenspannung
threshold voltage Tvj = 150°C V(TO) - - 0,8 V
Ersatzwiderstand
slope resistance Tvj = 150°C rT- - 10,5 mΩ
Sperrstrom
reverse current Tvj = 150°C, VR
1600 V IR-2-mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RAA'+CC' - 4-mΩ
Transistor Wechselrichter/ Transistor Inverter min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 35 A VCE sat -2,4 2,85 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 35 A -2,9 -V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 1 mA VGE(TO) 4,5 5,5 6,5 V
Eingangskapazität
input capacitance f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies -1,5 -nF
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES -1,5 500 µA
collector-emitter cut-off current VGE = 0V, Tvj =125°C, VCE = 1200 V -2,0 -mA
gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 300 nA
Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 22 Ohm td,on -50 -ns
VGE = ±15V, Tvj = 125°C, RG = 22 Ohm -50 -ns
Anstiegszeit (induktive Last) IC = INenn, VCC = 600 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 22 Ohm tr-55 -ns
VGE = ±15V, Tvj = 125°C, RG = 22 Ohm -55 -ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 22 Ohm td,off -290 -ns
VGE = ±15V, Tvj = 125°C, RG = 22 Ohm -320 -ns
Fallzeit (induktive Last) IC = INenn, VCC = 600 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 22 Ohm tf-50 -ns
VGE = ±15V, Tvj = 125°C, RG = 22 Ohm -70 -ns
Einschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 22 Ohm Eon -4,5 -mWs
LS = 75 nH
Abschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 22 Ohm Eoff -4,3 -mWs
LS = 75 nH
Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 22 Ohm
SC Data Tvj≤125°C, VCC =720 V ISC -160 -A
dI/dt = 2800 A/µs
2(11)
DB-PIM-10 (2).xls
http://store.iiic.cc/