Preliminary Technical Information IXEL40N400 Very High Voltage IGBT VCES IC90 VCE(sat) tfi(typ) ( Electrically Isolated Tab) = 4000V = 40A 3.5V = 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25C to 125C VGES Maximum Ratings 4000 V Continuous 20 V VGEM Transient 30 V IC90 TC = 90C 40 A ICM Pulse Width Limited by TJM, 1ms, VGE = 20V 250 A PC TC = 25C 380 W - 40 ... +125 C TJ TJM 125 C Tstg - 40 ... +125 C 300 260 C C 4000 V~ 30..170 / 7..36 Nm/lb-in. 8 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s VISOL IISOL < 1mA, 50/60 Hz, t = 1 minute FC Mounting Force Weight G E C G = Gate E = Emitter Isolated Tab C = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation UL Recognized Package High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 5.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 10mA, VCE = VGE Note 2, TJ = 125C = IC90, VGE = 15V, Note 1 TJ = 125C 7.0 V 100 A mA 500 nA 3.5 V V 1.5 2.5 3.0 High Power Density Easy to Mount Applications Capacitor Discharge Pulser Circuits DS99385A(12/09) (c) 2009 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ IXEL40N400 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = IC90, VCE = 10V, Note 1 14 ISC IC = IC90, VCC = 3400V, VCM < 4000V ISOPLUS i5-PakTM HV Outline E 23 S 200 A VGE = 15V, tSC < 10s 4 Cies 5900 VCE = 25V, VGE = 0V, f = 1MHz 280 pF 125 pF RGint 6 Qg(on) 270 nC 60 nC Qgc 133 nC td(on) tri Eon td(off) tfi 160 100 55 630 425 ns ns mJ ns ns 165 mJ 155 105 85 715 455 205 ns ns mJ ns ns mJ Qge Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Notes: IC = IC90, VGE = 15V, VCE = 1000 V Inductive load, TJ = 25C IC = IC90, VGE = 15V VCE = 2800V, RG = 33 Note 3 Inductive load, TJ = 125C IC = IC90, VGE = 15V VCE = 2800V, RG = 33 Note 3 (Pressure Mount) 0.15 1 2 pF Cres Coes S 0.26 C/W C/W + 3 c e1 e1 b3 b2 Pin 1 Pin 2 Pin 3 Tab 4 SYM INCHES MIN MAX b1 e = Gate = Emitter = Collector = Isolated MILLIMETER MIN MAX A 0.190 0.205 4.83 5.21 A1 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 3.81 BSC L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 1. Pulse test, t 300s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXEL40N400 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 80 300 VGE = 25V 19V 15V 70 VGE = 25V 21V 19V 250 17V 60 200 40 IC - Amperes IC - Amperes 13V 50 11V 30 15V 150 13V 100 20 11V 9V 50 10 9V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 80 16 18 20 50 VGE = 15V 1.8 13V VCE(sat) - Normalized IC - Amperes 14 2.0 VGE = 25V 19V 15V 60 11V 40 30 9V 20 I 1.6 C = 80A 1.4 I 1.2 C = 40A 1.0 0.8 10 I 7V C = 20A 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 5.0 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Reverse-Bias Safe Operating Area 90 5.5 TJ = 25C 5.0 80 70 4.5 60 4.0 I C IC - Amperes VCE - Volts 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 70 10 VCE - Volts VCE - Volts = 80A 3.5 3.0 40A 2.5 2.0 50 40 30 20 TJ = 125C 10 RG = 33 dv / dt < 10V / ns 20A 1.5 8 10 12 14 16 18 20 22 24 26 0 500 VGE - Volts 1000 1500 2000 2500 VCE - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ 3000 3500 4000 IXEL40N400 Fig. 8. Transconductance 50 180 45 160 40 140 35 g f s - Siemens IC - Amperes Fig. 7. Input Admittance 200 120 100 80 TJ = 125C 25C - 40C 60 TJ = - 40C 25C 125C 30 25 20 15 40 10 20 5 0 0 4 5 6 7 8 9 10 11 12 13 14 15 16 0 20 40 60 80 VGE - Volts 120 140 160 180 200 Fig. 10. Capacitance Fig. 9. Gate Charge 100,000 16 f = 1 MHz VCE = 1000V 14 I C = 40A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 100 IC - Amperes 10 8 6 4 Cies 10,000 1,000 Coes 100 Cres 2 0 10 0 40 80 120 160 200 240 280 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: EL_40N400(ABB Chip)12-16-09 http://store.iiic.cc/