IXFR15N100Q3 - Zilog - Product.Shopping

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1000 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C 10 A

IDM TC= 25°C, Pulse Width Limited by TJM 45 A

IATC= 25°C 7.5 A

EAS TC= 25°C 1.0 J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns

PDTC= 25°C 400 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

VISOL 50/60 Hz, 1 Minute 2500 V∼

FCMounting Force 20..120/4.5..27 N/lb.

Weight 5 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 1000 V

VGS(th) VDS = VGS, ID = 4mA 3.5 6.5 V

IGSS VGS = ±30V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V 25 μA

TJ = 125°C 1.5 mA

RDS(on) VGS = 10V, ID = 7.5A, Note 1 1.2 Ω

HiperFETTM

Power MOSFET

Q3-Class

IXFR15N100Q3 VDSS = 1000V

ID25 = 10A

RDS(on) ≤≤

≤≤

≤ 1.2ΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 250ns

DS100354(06/11)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Features

zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

zIsolated Mounting Surface

zLow Intrinsic Gate Resistance

z2500V~ Electrical Isolation

zFast Intrinsic Rectifier

zAvalanche Rated

zLow Package Inductance

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zDC-DC Converters

zBattery Chargers

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC Choppers

zTemperature and Lighting Controls

Advance Technical Information

(Electrically Isolated Tab)

G = Gate D = Drain

S = Source

ISOPLUS247

E153432

G

S

DIsolated Tab

IXFR15N100Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

1 = Gate

2,4 = Drain

3 = Source

ISOPLUS247 (IXFR) Outline

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 20V, ID = 7.5A, Note 1 7.5 12.5 S

Ciss 3250 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 265 pF

Crss 24 pF

RGi Gate Input Resistance 0.20 Ω

td(on) 28 ns

tr 10 ns

td(off) 30 ns

tf 8 ns

Qg(on) 64 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 7.5A 23 nC

Qgd 27 nC

RthJC 0.31 °C/W

RthCS 0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 15 A

ISM Repetitive, Pulse Width Limited by TJM 60 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr 250 ns

IRM 7.6 A

QRM 660 nC

IF = 7.5A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 7.5A

RG = 2Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXFR15N100Q3

Fi g . 1. Ou tpu t C har acter isti cs @ T

J

= 25ºC

0

2

4

6

8

10

12

14

0 2 4 6 8 10121416

V

DS

- Volts

I

D

- A mperes

V

GS

= 10V

7

V

6

V

8

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

4

8

12

16

20

24

0 5 10 15 20 25 30

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

9V

8

V

7

V

Fi g . 3. Ou tpu t C har acter isti cs @ T

J

= 125º C

0

2

4

6

8

10

12

14

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

5

V

6V

V

GS

= 10V

7V

Fig. 4. R

DS(on)

No r mal i zed to I

D

= 7.5A Valu e vs.

Junction T emp erature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Deg re es Centigrad e

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 15A

I

D

= 7.5A

Fig. 5. R

DS(on)

No r mal i zed to I

D

= 7. 5A Valu e vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

0246810121416182022

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. Maxi mum D r ai n C u r r en t vs.

Case Temper atu re

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Am peres

IXFR15N100Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Admittance

0

2

4

6

8

10

12

14

16

18

4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9

V

GS

- Volt s

I

D

- Amperes

T

J

= 12 5ºC - 40ºC

25ºC

Fi g . 8. Tran sco n du ctance

0

5

10

15

20

25

02468101214161820

I

D

- A mp e re s

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fi g . 9. F o rwar d Vo l t ag e D r o p o f I n tr in si c D i o de

0

5

10

15

20

25

30

35

40

45

50

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig . 10. Gate Ch ar g e

0

2

4

6

8

10

12

14

16

0 102030405060708090

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 500V

I

D

= 7.5A

I

G

= 10mA

Fig. 11. Capaci tance

10

100

1000

10000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g. 12. F o rwar d -Bi as Safe Operatin g Ar ea

0.1

1

10

100

10 100 1,000

VDS - V o lts

ID - A m peres

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

100µs

R

DS(on)

Limit 1ms 25µs

IXFR15N100Q3

Fi g . 13. Maximu m Transi en t Thermal Imp edan ce

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W