1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC327 BC328 Unit
Collector–Emitter Voltage VCEO –45 –25 Vdc
Collector–Base Voltage VCBO –50 –30 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–800 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA, IB = 0) BC327
BC328
V(BR)CEO –45
–25 —
——
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = –100 µA, IE = 0) BC327
BC328
V(BR)CES –50
–30 —
——
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10
m
A, IC = 0) V(BR)EBO –5.0 — — Vdc
Collector Cutoff Current
(VCB = –30 V, IE = 0) BC327
(VCB = –20 V, IE = 0) BC328
ICBO —
——
—–100
–100
nAdc
Collector Cutoff Current
(VCE = –45 V, VBE = 0) BC327
(VCE = –25 V, VBE = 0) BC328
ICES —
——
—–100
–100
nAdc
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0) IEBO — — –100 nAdc
Order this document
by BC327/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V) BC327/BC328
BC327–16/BC328–16
BC327–25/BC328–25
(IC = –300 mA, VCE = –1.0 V)
hFE 100
100
160
40
—
—
—
—
630
250
400
—
—
Base–Emitter On Voltage
(IC = –300 mA, VCE = –1.0 V) VBE(on) — — –1.2 Vdc
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA) VCE(sat) — — –0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz) Cob — 11 — pF
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT— 260 — MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
θ
JC(t) = (t)
θ
JC
θ
JC = 100
°
C/W MAX
θ
JA(t) = r(t)
θ
JA
θ
JA = 375
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
t1t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE
–1000
–10 –100–1.0 –3.0 –10 –30
VCE, COLLECTOR–EMITTER VOLTAGE
Figure 2. Active Region — Safe Operating Area
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
–100
1000
10 –1000–0.1 –10 –100
100
–1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms1.0 s TJ = 135
°
C
100
µ
s
VCE = –1.0 V
TA = 25
°
C
TA = 25
°
C
TC = 25
°
C
dc
dc
(APPLIES BELOW RATED VCEO)
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 7. Capacitances
–0.1 –1.0–1.0 –10 –100 –1000
–2.0
–1.0
0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
C, CAPACITANCE (pF)
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.01 –0.1 –10 –100–1.0
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1.0 –10 –1000–100
–10 –100
TJ = 25
°
C
IC = –10 mA
IC = –100 mA
IC = –300 mA
IC =
–500 mA
TA = 25
°
CVBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –1.0 V
VCE(sat) @ IC/IB = 10
θ
VC for VCE(sat)
θ
VB for VBE Cob
Cib
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC327/D
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