COMSET SEMICONDUCT ORS 1/5
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
MJ4030
MJ4033 60
MJ4031
MJ4034 80
VCBO Collector-Base Voltage IE=0
MJ4032
MJ4035 100
V
MJ4030
MJ4033 60
MJ4031
MJ4034 80
VCEO Collector-EmitterVoltage IB=0
MJ4032
MJ4035 100
V
VEBO Emitter-Base Voltage IC=0
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
5.0 V
DARLINGTON MEDIUM POWER COMPLEMENTARY
SILICON TRANSISTORS
For use as output devices in complementary general purpose amplifier
applications.
• High DC current Gain – hFE=3500 (Typ) @ IC=10 Adc
• Monolithic Construction with Built-in Base Emitter Shunt Resistor
The complementary PNP types are the MJ4033/34/35
COMSET SEMICONDUCT ORS 2/5
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
ICCollector Current
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
16 A
IBBase Current
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
0.5 A
PTPower Dissipation @ TC < 25°
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
150 Watts
TJ TsJunction
Storage Temperature
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
200
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-C Thermal Resistance, Junction to Case
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
1.17 °C/W
COMSET SEMICONDUCT ORS 3/5
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
EL ECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
MJ4030
MJ4033 60 - -
MJ4031
MJ4034 80 - -
VCEO Collector-Emitter Voltage (*) IC=100 mAdc, IB=0
MJ4032
MJ4035 100
V
VCE=30 Vdc, IB=0 MJ4030
MJ4033 --
VCE=40 Vdc, IB=0 MJ4031
MJ4034 --
ICEO Collector Cutoff Current
VCE=50 Vdc, IB=0 MJ4032
MJ4035 --
3.0 mA
MJ4030
MJ4033 60 - -
MJ4031
MJ4034 80 - -
V(BR)CEO
Collector-Emitter
Break do wn Voltag e (*) IB=0 Vdc, IC=100
MJ4032
MJ4035 100 - -
V
IEBO Emitter Cutoff Current VBE=5.0 V, IC=0
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
--5.0mA
COMSET SEMICONDUCT ORS 4/5
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
VCB=60 V, RBE=1.0 k ohm MJ4030
MJ4033 --
VCB=80 V, RBE=1.0 k ohm MJ4031
MJ4034 --
VCB=100 V, RBE=1.0 k ohm MJ4032
MJ4035
1.0
VCB=60 V, RBE=1.0 k ohm,
TC=150°C MJ4030
MJ4033 --
VCB=80 V, RBE=1.0 k ohm,
TC=150°C
MJ4031
MJ4034 --
ICER
Collector-Emitter Leakage
Current
VCB=100 V, RBE=1.0 k ohm,
TC=150°C MJ4032
MJ4035
5.0
mAdc
IC=10 A, IB=40 mAdc
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
--2.5
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=16 A, IB=80 mAdc
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
--4.0
Vdc
VBE Base-Emitter Voltage (*) IC=10 Adc, VCE=3.0Vdc
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
--3V
hfe DC Current Gain (*) VCE=10 Vdc, IC=3.0 Adc
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
1000 -- -
! ! ! For PNP types current and voltage values are negative ! ! !
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCT ORS 5/5
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
MECHANICAL DATA CAS E TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
