DO S D af MOS [S(2 fF IRF842,843 FIELD EFFECT POWER TRANSISTOR 500, 450 VOLTS RDS(ON) = 1.10 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL 5 to achieve low on-resistance with excellent device rugged- ness and reliability. \a This design has been optimized to give superior performance A _ G in most switching applications including: switching power _ a s supplies, inverters, converters and solenoid/relay drivers. on CASE, STYLE TO-220AB Also, the extended safe operating area with good linear 4041026) 118298) ayes transfer characteristics makes it well suited for many linear [r ssoteee) 1 OF 7B 832) oy Le 25511 38 applications such as audio amplifiers and servo motors. t CI Ot; mee! A Features | LE | reweetirue Polysilicon gate Improved stability and reliability weet, | + geen et : 3.68 .220(5.59) e No secondary breakdown Excellent ruggedness | b ~~ + -130{3.3} - he 3 a Ultra-fast switching Independent of temperature Ad 7 me . TERM. A 500(12,7)MIN, e Voltage controlled High transconductance TeRM2~ |] 6811.39 e Low input capacitance Reduced drive requirement ews fb oe: . oh 0.84 .105(2.87 lg 210712.72) e Excellent thermal stability Ease of paralleling 0276. rae rm OB7221) UNIT TYPE [TERM.NTERN.2) TERMS TAB POWER MOS FET /T0-220-AB} GATE JORAIN| SOURCE] DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF842 IRF843 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Rgg = 1M0 VpGR 500 450 Volts Continuous Drain Current g To= 25C Ip 7 7 A Tc = 100C 4 4 A Pulsed Drain Current Ibm 28 28 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 Ww/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rac 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Rad 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 231 electrical characteristics (Tc = 25C) (untess otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF842 BVpss 500 _ _ Volts (Vag = OV, Ip = 250 wA) IRF843 450 _ Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vas = OV, Tc = 25C) _ _ 250 uA (Vpg = Max Rating, 0.8, Vgg = OV, Tc = 125C) 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vest) 2.0 _ 4.0 Volts (Vps = Vas, Ip = 250 pA) On-State Drain Current | 7 _ _ A (Vag = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 4A) Rps(On) _ 1.0 1.1 Ohms Forward Transconductance (Vpg = 10V, Ip = 4A) Ofs 2.8 3.5 _ mhos dynamic characteristics Input Capacitance Vas = 0V Ciss _ 1400 1600 pF Output Capacitance Vps = 25V Coss _ 190 350 pF Reverse Transfer Capacitance f = 1 MHz Crss _ 28 150 pF switching characteristics Turn-on Delay Time Vps = 225V ta(on) _ 20 _ ns Rise Time Ip = 4A, Vas = 15V tr _ 20 _ ns Turn-off Delay Time RGeEN = 500, Reg = 12.69 ta (off) _ 60 _ ns Fall Time (Res (EQuiv.) = 109) tt _ 30 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 7 A Pulsed Source Current Ism _ _ 28 A Diode Forward Voltage _ 0.8 . (To = 25C, Vag = OV, Ig = 7A) VsD 19 Volts Reverse Recovery Time ter _ 520 _ ns (Ig = 8A, dig/dt = 100A/usec, To = 125C) Qrar 6.4 uC *Pulse Test: Pulse width = 300 us, duty cycle = 2% 100 80 60 40 q 2 ww 10 z 8 = 6 e 4 i @ > 2 oO z 7 < 10 of opera iN AREA (6 0 SF-MAY BE LIMITED BY Rosion; 0.4 0 SINGLE PULSE ' T=28C IRF843 IRFB42 200 6.1 1 2 4 6 8 10 20 = 40 +60 80100 Vps- ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 232 2.4 CONDITIONS: Rps(ON) CONDITIONS: Ip = 4.0 A, Vag = 10V VasctH) CONDITIONS: Ip = 250uA. Vog = 2.2 2.0 1.8 16 Rosion) 1.4 1.2 1.0 08 VesctH) 0.6 Rogion) AND Veggcria) NORMALIZED 0.4 0.2 0 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygion, AND Vagiru; VS: TEMP. ~40 0 40 120 160