DESCRIPTION
The ISO130 is a high isolation-mode rejection, isolation
amplifier suited for motor control applications. Its versatile
design provides the precision and stability needed to accu-
rately monitor motor currents in high-noise motor control
environments. The ISO130 can also be used for general
analog signal isolation applications requiring stability and
linearity under severe noise conditions.
The signal is transmitted digitally across the isolation barrier
optically, using a high-speed AlGaAs LED. The remainder
of the ISO130 is fabricated on 1µm CMOS IC process. A
sigma-delta analog-to-digital converter, chopper stabilized
amplifiers and differential input and output topologies make
the isolation amplifier suitable for a variety of applications.
The ISO130 is easy to use. No external components are
required for operation. The key specifications are 10kV/µs
isolation-mode rejection, 85kHz large signal bandwidth, and
4.6µV/°C VOS drift. A single power supply ranging from
+4.5V to +5.5V makes this amplifier ideal for low power
isolation applications.
The ISO130 is available in 8-pin plastic DIP and 8-pin
plastic gull-wing surface mount packages.
iSO130
FEATURES
●HIGH ISOLATION-MODE REJECTION:
10kV/µs (min)
●LARGE SIGNAL BANDWIDTH: 85kHz (typ)
●DIFFERENTIAL INPUT/DIFFERENTIAL OUTPUT
●VOLTAGE OFFSET DRIFT vs
TEMPERATURE: 4.6µV/°C (typ)
●OFFSET VOLTAGE 1.8mV (max)
●INPUT REFERRED NOISE: 300µVrms (typ)
●NONLINEARITY: 0.25% (max)
●SINGLE SUPPLY OPERATION
●SIGMA-DELTA A/D CONVERTER
TECHNOLOGY
●WORLDWIDE SAFETY APPROVAL:
UL1577 (File No. E162573), VDE0884
(File No. 85511), CSA22.2 (File No. 88324)
●AVAILABLE IN 8-PIN PLASTIC DIP and
8-PIN GULL-WING PLASTIC SURFACE MOUNT
APPLICATIONS
● MOTOR AND SCR CONTROL
● MOTOR PHASE CURRENT SENSING
● INDUSTRIAL PROCESS CONTROL:
Transducer Isolator, Isolator for
Thermocouples, RTDs
● GENERAL PURPOSE ANALOG SIGNAL
ISOLATION
●POWER MONITORING
● GROUND LOOP ELIMINATION
High IMR, Low Cost
ISOLATION AMPLIFIER
1
2
3
4
8
7
6
5
VS1
VIN+
VIN–
GND1
VS2
VOUT+
VOUT–
GND2
IMR SHIELD
ISO130
SBOS220 – OCTOBER 2001
www.ti.com
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1994, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
ISO130
2SBOS220
www.ti.com
PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS
Supply Voltages: VS1, VS2 ........................................................ 0V to 5.5V
Steady-State Input Voltage ..........................................–2V to VS1 + 0.5V
2 Second Transient Input Voltage ................................................... –6.0V
Output Voltages: VOUT+, VOUT– ................................ –0.5V to VS2 + 0.5V
Lead Temperature Solder (1.6mm below seating plane, 10s)....... 260°C
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT PACKAGE NUMBER(1)
ISO130P 8-Pin Plastic DIP 006-3
ISO130PB 8-Pin Plastic DIP 006-3
ISO130U
8-Pin Gull-Wing Plastic Surface Mount
006-2
ISO130UB
8-Pin Gull-Wing Plastic Surface Mount
006-2
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
Top View 8-Pin DIP/SOIC
1
2
3
4
VS1
VIN+
VIN–
GND1
8
7
6
5
VS2
VOUT +
VOUT –
GND2
ORDERING INFORMATION
GAIN ERROR
PRODUCT PACKAGE (MAX)
ISO130P 8-Pin Plastic DIP ±5% (mean value = 8.00)
ISO130PB 8-Pin Plastic DIP ±1% (mean value = 7.93)
ISO130U
8-Pin Gull-Wing Plastic Surface Mount
±5% (mean value = 8.00)
ISO130UB
8-Pin Gull-Wing Plastic Surface Mount
±1% (mean value = 7.93)
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
ISO130 3
SBOS220 www.ti.com
ISO130P, ISO130PB
ISO130U, ISO130UB
PARAMETER CONDITIONS CHARACTERISTIC UNITS
ISOLATION CHARACTERISTICS
Installation Classification As Per VDE0109/12.83
Table I Rated Mains Voltage ≤ 300Vrms I-IV
Rated Mains Voltage ≤ 600Vrms I-III
Climatic Classification 40/85/21
Pollution Degree(1) As Per VDE0109/12.83 2
Maximum Working Insulation Voltage (VIORM) 600 Vrms
Side A to Side B Test Voltage, Method b (VPR)(9)
Partial Discharge < 5pC VPR = 1.6 x VIORM, tP = 1s 960 Vrms
Side A to Side B Test Voltage, Method a (VPR)(9) Type and Sample Test
Partial Discharge < 5pC VPR = 1.2 x VIORM, tP = 60s 720 Vrms
Highest Allowable Overvoltage (VTR)(9) Transient Overvoltage, tTR = 10s 6000 VPEAK
Safety-Limiting Values
Case Temperature (TSI)175 °C
Input Power (PSI (INPUT))80 mW
Output Power (PSI (OUTPUT))250 mW
INSULATION RELATED SPECIFICATIONS
Min. External Air Gap (clearance) > 7 mm
Min. External Tracking Path (creepage) 8mm
Internal Isolation Gap (clearance) 0.5 mm
Tracking Resistance (CTI) 175 V
Isolation Group per VDE0109 III a
Insulation Resistance 25°C, VISO = 500V ≥ 1011 Ω
ELECTRICAL CHARACTERISTICS
ISOLATION SPECIFICATIONS – VDE0884 INSULATION CHARACTERISTICS
At VIN–, VIN– = 0V, TA = 25°C, VS1, VS2 = 5.0V, unless otherwise noted.
ISO130P, ISO130PB
ISO130U, ISO130UP
PARAMETER CONDITIONS MIN TYP MAX UNITS
ISOLATION
Input-Output Surge Withstand Voltage (8, 9),t = 1
MIN, RH ≤ 50%
(In accordance with UL1577) 3750 Vrms
Barrier Impedance(9)
Resistance VISO = 500VDC 1013 Ω
Capacitance f = 1MHz 0.7 pF
Isolation Mode Voltage Errors
Rising Edge Transient Immunity VIM = 1kV, ∂ VOUT < 50mV 10 25 kV/µs
Falling Edge Transient Immunity VIM = 1kV, ∂ VOUT < 50mV 10 15 kV/µs
Isolation Mode Rejection Ratio(2) > 140 dB
ELECTRICAL CHARACTERISTICS
ISOLATION SPECIFICATIONS
At VIN+, VIN– = 0V, TA = 25°C, VS1, VS2 = 5.0V, unless otherwise noted.
ISO130
4SBOS220
www.ti.com
ELECTRICAL CHARACTERISTICS
At VIN+, VIN– = 0V, TA = 25°C, VS1, VS2 = 5.0V, unless otherwise noted.
ISO130P, ISO130PB
ISO130U, ISO130UB
PARAMETER CONDITIONS MIN TYP MAX UNITS
INPUT
Initial Offset Voltage –1.8 –0.9 0.0 mV
vs Temperature 4.6 µV/°C
vs VS1 30 µV/V
vs VS2 –40 µV/V
Power Supply Rejection; VS1
and VS2 Together 1MHz Square Wave, 5ns Rise/Fall Time 5 mV/V
Noise 0.1Hz to 100kHz 300 µVrms
Input Voltage Range –200 200 mV
Maximum Input Voltage Range before Output Clipping ±300 mV
Initial Input Bias Current(3) –670 nA
vs Temperature 3 nA/°C
Input Resistance(3) 530 kΩ
vs Temperature 0.38 %/°C
Common-Mode Rejection Ratio(4) 72 dB
GAIN(5)
Initial Gain
ISO130P/ISO130U –200mV < VIN+ < 200mV 7.61 8.00 8.40 V/V
ISO130PB/ISO130UB –200mV < VIN+ < 200mV 7.85 7.93 8.01 V/V
Gain vs Temperature 10 ppm/°C
Gain vs VS1 2.1 ppm/mV
Gain vs VS2 –0.6 ppm/mV
Gain Nonlinearity
for –200mV < VIN+ < 200mV 0.2 0.35 %
for –100mV < VIN+ < 100mV 0.1 0.25 %
vs Temperature(6) –200mV < VIN+ < 200mV –0.001 % pts/°C
vs VS1(6) –200mV < VIN+ < 200mV –0.005 % pts/V
vs VS2 (6) –200mV < VIN+ < 200mV –0.007 % pts/V
OUTPUT
Voltage Range
High VIN+ = +500mV 3.61 V
Low VIN+ = –500mV 1.18 V
Common-Mode Voltage –40°C < TA < 85°C, 4.5V < VS1 < 5.5V 2.2 2.39 2.6 V
Current Drive(7) 1mA
Short-Circuit Current VOUT = 0V or VOUT = VS2 9.3 mA
Output Resistance 11 Ω
vs Temperature 0.6 %/°C
FREQUENCY RESPONSE
Bandwidth
–3dB –40°C to 85°C 50 85 kHz
–45°35 kHz
Rise/Fall Time (10% - 90%) –40°C to 85°C4.36.6µs
Propagation Delay
to 10% –40°C to 85°C2.03.3µs
to 50% –40°C to 85°C3.45.6µs
to 90% –40°C to 85°C6.39.9µs
POWER SUPPLIES
Rated Voltage 5.0 V
Voltage Range 4.5 5.5 V
Quiescent Current
VS1 VIN+ = 200mV, –40°C < TA < 85°C, 4.5V < VS1 < 5.5V 10.7 15.5 mA
VS2 –40°C < TA < 85°C, 4.5V < VS1 < 5.5V 11.6 15.5 mA
TEMPERATURE RANGE
Specification –40 85 °C
Operating –40 100 °C
Storage –55 125 °C
θ
C–A86 °C/W
NOTES: (1) This part may also be used in Pollution Degree 3 environments where the rated mains voltage is 300Vrms (per DIN VDE0109/12.83). (2) IMRR
= 20 log (∂VIN/∂VISO). (3) Time averaged value. (4) VIN+ = VIN– = VCM. CMRR = 20 log (∂VCM/∂VOS). (5) The slope of the best-fit line of (VOUT+ – VOUT–) vs
(VIN+ – VIN–). (6) Change in nonlinearity vs temperature or supply voltage expressed in number of percentage points per °C or volt. (7) For best offset voltage
performance. (8) For devices with minimum VISO specified at 3750Vrms, each isolation amplifier is proof-tested by applying an insulation test voltage ≥
4500Vrms for 1 second (leakage current < 5µA). This specification does not guarantee continuous operation. (9) Pins 1-4 are shorted together and pins 5-
8 are shorted together for this test.
ISO130 5
SBOS220 www.ti.com
TYPICAL CHARACTERISTICS
At TA = 25°C, VS1, VS2 = 5.0VDC, VIN+, VIN– = 0V, unless otherwise noted.
–40
110
100
90
80
70
60
3dB Bandwidth (kHz)
BANDWIDTH vs TEMPERATURE
–200 20406080100
48
44
40
36
32
28
Temperature (°C)
45° Phase Bandwidth (kHz)
3dB Bandwidth
45° Phase Bandwidth
AMPLITUDE and PHASE RESPONSE vs FREQUENCY
0
–1
–2
–3
–4
Relative Amplitude (dB)
100 1k 10k 100k
Frequency (Hz)
0
–5
–10
–15
–30
–45
–60
Phase (degrees)
Amplitude
Phase
–40
10
8
6
4
2
0
Time (µs)
PROPAGATION DELAYS and RISE/FALL TIME
vs TEMPERATURE
–200 20406080100
Temperature (°C)
Delay to 90%
Rise/Fall Time
Delay to 10%
Delay to 50%
4.4
600
400
200
0
–200
–400
–600
Input Offset Voltage Change (µV)
INPUT OFFSET VOLTAGE CHANGE vs
INPUT SUPPLY VOLTAGE
Input Supply Voltage, V
S1
(V)
4.6 4.8 5.0 5.2 5.4 5.6
+2σ
Mean
–2σ
V
S2
= 5V
0
3
2.5
2
1.5
1
0.5
0
Input Voltage Noise (mVrms)
INPUT VOLTAGE NOISE vs INPUT VOLTAGE
50 100 150
Input Voltage (mV)
200 250
No Bandwidth Limiting
Bandwidth Limited to 100kHz
Bandwidth Limited
to 10kHz
–40
1500
1000
500
0
–500
–1000
Input Offset Voltage Change (µV)
INPUT OFFSET VOLTAGE CHANGE vs TEMPERATURE
–200 20406080100
Temperature (°C)
+2σ
–2σ
Mean
ISO130
6SBOS220
www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS1, VS2 = 5.0VDC, VIN+, VIN– = 0V, unless otherwise noted.
4.4
400
300
200
100
0
–100
–200
Input Offset Voltage Change (µV)
INPUT OFFSET VOLTAGE CHANGE vs
OUTPUT SUPPLY VOLTAGE
Output Supply Voltage, V
S2
(V)
4.6 4.8 5.0 5.2 5.4 5.6
+2σMean
– 2σ
V
S1
= 5V
–6
2
0
–2
–4
–6
–8
–10
IInput Current (mA)
INPUT CURRENT vs INPUT VOLTAGE
Input Voltage (V)
–4–20246
–40
1.5
1
0.5
0
–0.5
–1
Gain Drift (%)
GAIN DRIFT vs TEMPERATURE
–200 20406080100
Temperature (°C)
+2σ
Mean
–2σ
4.4
0.5
0
–0.5
–1
–1.5
–2
Gain Change (%)
GAIN CHANGE vs INPUT SUPPLY VOLTAGE
Input Supply Voltage, V
S1
(V)
4.6 4.8 5.0 5.2 5.4 5.6
–2σ
+2σ
Mean V
S2
= 5V
4.4
0.5
0.4
0.3
0.2
0.1
0
–0.1
Gain Change (%)
Output Supply Voltage, VS2 (V)
4.6 4.8 5.0 5.2 5.4 5.6
GAIN CHANGE vs OUTPUT SUPPLY VOLTAGE
+2σ
–2σ
Mean
VS1 = 5V
–0.2
0.3
0.2
0.1
0
–0.1
–0.2
–0.3
% of Full-Scale
Input Voltage (V)
NONLINEARITY ERROR vs INPUT VOLTAGE
–0.1 0 0.1 0.2
+2σ
–2σ
Mean
ISO130 7
SBOS220 www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS1, VS2 = 5.0VDC, VIN+, VIN– = 0V, unless otherwise noted.
–40
0.15
0.10
0.05
0
–0.05
–0.10
Nonlinearity Change (% pts)
NONLINEARITY CHANGE vs TEMPERATURE
–200 20406080100
Temperature (°C)
Mean
+2σ
–2σ
4.4
0.06
0.04
0.02
0
–0.02
–0.04
–0.06
Nonlinearity Change (% pts)
NONLINEARITY CHANGE vs INPUT SUPPLY VOLTAGE
Input Supply Voltage, V
S
(V)
4.64.85.05.25.45.6
Mean
+2σ
–2σ
V
S2
= 5V
4.4
0.06
0.04
0.02
0
–0.02
–0.04
Non-Linearity Change (%PTS)
NONLINEARITY CHANGE vs
OUTPUT SUPPLY VOLTAGE
Output Supply Voltage, VS (V)
4.6 4.8 5.0 5.2 5.4 5.6
Mean
–2σ
+2σ
VS1 = 5V
–0.10
0.15
0.10
0.05
0
–0.05
–0.10
–0.15
–0.20
Error -% of Full-Scale
Input Voltage (V)
NONLINEARITY ERROR vs INPUT VOLTAGE
–0.05 0 0.05 0.10
Mean
+2σ
–2σ
–0.6
4
3.5
3
2.5
2
1.5
1
Output Voltage (V)
OUTPUT VOLTAGE vs INPUT VOLTAGE
Input Voltage (V)
–0.4 –0.2 0 0.2 0.4 0.6
VOUT–
(Pin 6) VOUT+
(Pin 7)
–0.2
0
–200
–400
–600
–800
–1000
–1200
Input Current (nA)
Input Voltage (V)
INPUT CURRENT vs INPUT VOLTAGE
–0.1 0 0.1 0.2
ISO130
8SBOS220
www.ti.com
LARGE SIGNAL SINUSOIDAL RESPONSE
OF ISO130
LARGE SIGNAL SQUARE WAVE RESPONSE
OF ISO130
+100mV
–100mV
—
—
0
1.6V
Output Input
+100mV
–100mV
—
—
0
1.6V
Output Input
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS1, VS2 = 5.0VDC, VIN+, VIN– = 0V, unless otherwise noted.
10µs/div
10µs/div
–0.4
10.5
10
9.5
9
8.5
Input Supply Current (mA)
INPUT SUPPLY CURRENT vs INPUT VOLTAGE
Input Voltage (V)
–0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4
T
A
= –40°C
T
A
= –25°C
T
A
= –85°C
0
200
150
100
50
0
P
SI
-
INPUT POWER
(mW)
Ambient Temperature (°C)
20 40 60 80 100 120 140 160 180
DEPENDENCE OF SAFETY-LIMITING PARAMETERS
ON AMBIENT TEMPERATURE 400
300
200
100
0
P
SI
-
OUTPUT POWER
(mW)
–0.4
12
11.5
11
10.5
10
Output Supply Current (mA)
OUTPUT SUPPLY CURRENT vs INPUT VOLTAGE
Input Voltage (V)
–0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4
TA = –40°C
TA = 25°C
TA = –85°C
Output (V)
OVERLOAD RECOVERY OF ISO130
V
IN
= 500mV to 0, 2kHz Square Wave
2µs/div
3.4
2.4
1.4
ISO130 9
SBOS220 www.ti.com
THEORY OF OPERATION
The ISO130 isolation amplifier (Figure 1) uses an input and
output section galvanically isolated by a high speed optical
barrier built into the plastic package. The input signal is
converted to a time averaged serial bit stream by use of a
sigma-delta analog-to-digital converter and then optically
transmitted digitally across the isolation barrier. The output
section receives the digital signal and converts it to an
analog voltage, which is then filtered to produce the final
output signal.
Internal amplifiers are chopper-stabilized to help maintain
device accuracy over time and temperature. The encoder
circuit eliminates the effects of pulse-width distortion of the
optically transmitted data by generating one pulse for every
edge of the converter data to be transmitted. This coding
scheme reduces the effects of the non-ideal characteristics of
the LED, such as non-linearity and drift over time and
temperature.
ISOLATION AND INSULATION SPECIFICATIONS
The performance of the isolation barrier of the ISO130 is
specified with three specifications, two of which require
high voltage testing. In accordance with UL1577, the barrier
integrity of each isolation amplifier is proof-tested by apply-
ing an insulation test voltage greater than or equal to
4500Vrms for one second. This is to guarantee the isolation
amplifier will survive a 3750V transient voltage. The barrier
leakage current test limit is 5µA. Pins 1-4 are shorted
together and pins 5-8 are shorted together during the test.
This test is followed by the partial discharge isolation
voltage test as specified in the German VDE0884. This
method requires the measurement of small current pulses
(<5pico Colomb) while applying 960Vrms across every
ISO130 isolation barrier. This guarantees 600Vrms continu-
ous isolation (VISO) voltage. No partial discharge may be
initiated to pass this test. This criterion confirms transient
overvoltage (1.6 x 600Vrms) protection without damage to
the ISO130.
This test method represents “state of the art” for nondestruc-
tive high voltage reliability testing. It is based on the effects
of nonuniform fields that exist in heterogeneous dielectric
material during barrier degradation. In the case of void non-
uniformities, electric field stress begins to ionize the void
region before bridging the entire high voltage barrier. The
transient conduction of charge during and after the ioniza-
tion can be detected externally as a burst of 0.01 to 0.1µs
current pulses that repeat on each AC voltage cycle. The
minimum AC barrier voltage that initiates partial discharge
is defined as the “inception voltage”. Decreasing the barrier
voltage to a lower level is required before partial discharge
ceases and is defined as the “extinction voltage”.
FIGURE 1. Block Diagram of ISO130 Isolation Amplifier.
Decoder
and
D/A
Detector
CIrcuit Filter
LED
Drive
Circuit
Σ ∆
A/D
and
Encoder
Voltage
Regulator Clk Isolation
Barrier
Voltage
Regulator
OutputInput
FIGURE 2. Isolation Mode Rejection and Transient Immunity Test Circuit.
78L05
In Out
9V 0.1µF
2
ISO130
34
+5V
8
5
7
OPA604
1kΩ
1kΩ
5.11kΩ
330pF
6
0.1µF
+15V
–15V
330pF
5.11kΩ
0.1µF
+–
VOUT
0.1µF
Pulse Generator
VIM
VOUT+
1
+
0.1µF
ISO130
10 SBOS220
www.ti.com
FIGURE 3. Typical Transient Immunity Failure Waveform.
Both tests are 100% production tests. The partial discharge
testing of the ISO130 is performed after the UL1577 test
criterion giving more confidence in the barrier reliability.
The third guaranteed isolation specification for the ISO130 is
Transient Immunity (TI), which specifies the minimum rate
of rise or fall of an isolation mode noise signal at which small
output perturbations begin to occur. An isolation mode signal
is defined as a signal appearing between the isolated grounds,
GND1 and GND2. Isolation Mode Voltage (IMV) is the
voltage appearing between isolated grounds. Under certain
circumstances this voltage across the isolation barrier can
induce errors at the output of the isolation amplifier. Figure 2
shows the Transient Immunity Test Circuit for the ISO130. In
this test circuit a pulse generator is placed between the
isolated grounds (GND1 and GND2). The inputs of the
ISO130 are both tied to GND1. A difference amplifier is used
to gain the output signal of the ISO130. A Transient Immu-
nity failure is determined when the output of the ISO130
changes by more than 50mV as illustrated in Figure 3.
Finally, Isolation Mode Rejection Ratio (typically >140dB
for the ISO130) is defined as the ratio of differential signal
gain to the isolation mode gain at 60Hz. The magnitude of
the 60Hz voltage across the isolation barrier during this test
is not so large as to cause Transient Immunity errors. The
Isolation Mode Rejection Ratio should not be confused with
the Common Mode Rejection Ratio. The Common Mode
Rejection Ratio defines the relationship of differential signal
gain (signal applied differentially between pins 2 and 3) to
the common mode gain (input pins tied together and the
signal applied to both inputs at the same time).
APPLICATIONS INFORMATION
APPLICATION CIRCUITS
Figure 4 illustrates a typical application for the ISO130. In
this motor control circuit, the current that is sent to the motor
is sensed by the resistor, RSENSE. The voltage drop across
this resistor is gained up by the ISO130 and then transmitted
across the isolation barrier. A difference amplifier, A2, is
used to change the differential output signal of the ISO130
to a single ended signal. This voltage information is then
sent to the control circuitry of the motor. The ISO130 is
particularly well suited for this application because of its
superior Transient Immunity (10kV/µs, max) and its excel-
lent immunity to RF noise.
VIM
1000V
0V
50mV Perturbation
(Definition of Failure)
0V
VOUT
FIGURE 4. ISO130 Used to Monitor Motor Current.
78L05
In Out
R
SENSE
V+
HV
–
0.1µF
0.1µF
2
ISO130
• • •
• • •
• • •
+–
34
+5V
8
5
7
OPA604
2kΩ
2kΩ
10kΩ
150pF
10kΩ
150pF
6
0.1µF
+15V
–15V
6
2
3
HV+
0.01µF
1
V
OUT+
ISO130 11
SBOS220 www.ti.com
The current-sensing resistor should have a relatively low
value of resistance (to minimize power dissipation), a fairly
low inductance (to accurately reflect high-frequency signal
components), and a reasonably tight tolerance (to maintain
overall circuit accuracy).
LAYOUT SUGGESTIONS
1. Bypass capacitors should be located as close as possible
to the input and output power supply pins.
2. In some applications, offset voltage can be reduced by
placing a 0.01µF capacitor from pin 2 and/or pin 3 to
GND1. This noise can be caused by the combination of
long input leads and the switched-capacitor nature of the
input circuit. This capacitor(s) should be placed as close
to the isolation amplifier as possible.
3. The trace lengths at input should be kept short or a twisted
wire pair should be used to minimize EMI and inductance
effects. For optimum performance, the input signal should
be as close to the input pins a possible.
4. A maximum distance between the input and output sides
of the isolation amplifier should be maintained in the
layout in order to minimize stray capacitance. This prac-
tice will help obtain optimal Isolation Mode performance.
Ground planes should not pass below the device on the
PCB.
5. Care should be taken in selecting isolated power supplies
or regulators. The ISO130 can be affected by changes in
the power supply voltages. Carefully regulated power
supplies are recommended.
6. For improved nonlinearity and nonlinearity temperature
drift performance, pin 3 should be tied to GND1 and the
input voltage range of pin 2 should be less than 100mV.
ISO130
12 SBOS220
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