5SGS 08D4500 5SGS 08D4500 Old part no. TG 907-800-45 Gate Turn-off Thyristor Properties Full reverse voltage High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 800 I TAVm = 285 I TSM = 4 000 V TO = 1.770 r T = 3.106 V A A A V m Types VDRM, VRRM 5SGS 08D4500 4 500 V Conditions: Tj = -40 / 115 C, half sine waveform, f = 50Hz Mechanical Data Fm Mounting force m Weight 0.3 kg DS Surface creepage distance 25 mm Da Air strike distance 13 mm 5 1 kN Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TG/079/02c Sep-11 1 of 6 5SGS 08D4500 Maximum Ratings VDRM VRRM Repetitive peak off-state and peak reverse voltage Tj = -40 / 115 C, VGC = -2 V ITGQM Peak Turn-off current Tj = -40 / 115 C, CS=2 F, diGC /dt = -25 A/s, Maximum Limits Unit 4 500 V 800 A 450 A 285 A 4 000 A 80 000 A2s 400 A/s 1 000 V/s VDM = 0.8 VDRM RMS on-state current ITRMS Tc = 70 C, half sine waveform, f = 50 Hz Average on-state current ITAVm Tc = 70 C, half sine waveform, f = 50 Hz Peak non-repetitive surge ITSM half sine pulse, tp = 10 ms, VR = 0 V I2t Limiting load integral half sine pulse, tp = 10 ms, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITGQM, VD = 2/3 VDRM, f = 50 Hz (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM, VGC = - 2 V VDSP Peak turn-off voltage spike due to snubber 500 V IFGCM Peak forward gate current 30 A IGCMS RMS gate current 25 A VGCM Peak reverse gate voltage -16 V ton(min) Minimum permissible on-time 50 s toff(min) Minimum permissible off-time 100 s Tjmin - Tjmax Operating temperature range -40 / 115 C Tstgmin Tstgmax Storage temperature range -40 / 115 C Unless otherwise specified Tj = 115 C Type of GTO Thyristor 5SGS 08D4500 Recommended Diodes SNUBBER FREEWHEEL 5SDF 04D4504 5SDF 04D4504 ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TG/079/02c Sep-11 2 of 6 5SGS 08D4500 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 4.330 V IGT = 2 A, ITM =800 A VT0 Threshold voltage 1.770 V rT Slope resistance 3.106 m 40 A 50 mA 50 mA 50 mA 1.5 V 4.0 1.0 0.6 A 1.5 12.5 14 30 s IT1 = 333 A, IT2 = 1 000 A IL Latching current Tj = 25 C IDM Peak off-state current VD = VDRM, VGC = -2 V IRM Peak reverse current VR = VRRM IGCM Peak negative gate leakage current VGC = -16 V VGT Gate trigger voltage Tj = -40 / 115 C IGT Gate trigger current VD = 12 V, RL = 0.1 tf tS tgq ttail Fall time Storage time Turn-off time Tail time Tj = - 40 C Tj = 25 C Tj = 125 C Definitions as on Fig.9 VD = 2/3 VDRM, ITGQ = ITGQM, CS = 2 F, VGC = -15 V, diGC /dt = -25 A/s Unless otherwise specified Tj = 115 C Thermal Parameters Rthjc Thermal resistance junction to case Value Unit 40 K/kW 12 K/kW double side cooling Rthch Thermal resistance case to heatsink, double side cooling ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TG/079/02c Sep-11 3 of 6 5SGS 08D4500 Transient Thermal Impedance Analytical function for transient thermal impedance 4 Z thjc Ri (1 exp(t / i )) Zthjc ( K/kW ) i 1 Conditions: Fm = 5 1 kN, Double side cooled i 1 2 3 4 Ri ( K/kW ) 11.51 7.72 13.47 7.31 i ( s ) 0.4201 0.1900 0.0592 0.0140 45 40 35 30 25 20 15 10 5 D = 90% 80% 70% 60% 50% 40% 30% 20% 10% 0 single 0,0001 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) 1200 T j = 25C 115C 1000 PT ( W ) IT ( A ) Fig.2 Transient thermal impedance junction to case (Double side cooled) D =100% 90% 80% 70% 60% 2000 1800 50% 1600 ITRMSmax 1400 800 40% 1200 600 30% 1000 800 400 20% 600 400 200 10% 200 0 0 0 1 2 3 4 5 6 VT (V) Fig.3 Maximum instaneous on-state characteristics 0 200 400 600 800 I TAV ( A ) Fig.4 Power losses vs Rectangular pulse current ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TG/079/02c Sep-11 4 of 6 5SGS 08D4500 100 RGC ( ) ITGQM ( A ) 1000 800 10 600 400 1 200 0 1 2 3 C S ( F ) 0 4 Fig.5 Maximum permissible peak turn-off current vs snubber capacitance 20 40 60 80 100 V DR norm alized ( % of V DRM ) Fig.6 Maximum forward blocking voltage vs External gate-cathode resistance 8 IGT ( A ) IGT normalized 4 3 7 6 5 4 2 Typical 3 2 1 1 0 -40 -20 0 20 40 60 80 100 120 0 -40 -30 -20 -10 10 20 30 T j ( C ) T j ( C ) Fig.7 Maximum gate trigger current vs Junction temperature 0 Fig.8 Gate trigger current normalized to IGT by 25C vs Junction temperature ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TG/079/02c Sep-11 5 of 6 1.0 W off ( J ) W on ( J ) 5SGS 08D4500 1.5 0.8 1.0 0.6 0.4 0.5 0.2 0.0 0.0 0 200 400 600 800 IT ( A ) Fig.9 Maximum turn-on energy per pulse vs. on-state current, VD = 1000 V, diT/dt = 200 A/s, CS = 2 F, RS = 5 , Tj = Tjmax 0 200 400 600 800 I TGQ ( A ) Fig.10 Maximum turn-off energy per pulse vs. turn-off current, VD = 2250 V, CS = 2 F, RS = 5 , diGC /dt = -25 A/s, Tj = Tjmax Fig.11 Turn-off waveform diagram Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TG/079/02c Sep-11 6 of 6